Karakterisasi Lapisan Tipis GaAs dengan Spektrum Photoluminescence pada Temperatur 300 K dan 77 K

Virginia Fahriza Amaliya, NIM. 15620019 (2020) Karakterisasi Lapisan Tipis GaAs dengan Spektrum Photoluminescence pada Temperatur 300 K dan 77 K. Skripsi thesis, UIN SUNAN KALIJAGA YOGYAKARTA.

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Abstract

Photoluminescence (PL) spectra from GaAs thin layer is presented to find out the general characteristics of the material. The characters was known are photon energy, radiation transition type and gap energy. Then analyzed the relationship between intensity and wavelength spectrum of photoluminescence GaAs thin films at a temperature of 300 K and a temperature of 77 K using a focus lens and not using a focus lens. The design and setting up of tools for the characterization of thin films has been carried out based on the principle of photoluminescence (PL). Designing tools process used Corel Draw and Visio 2016 software. Tools used in characterization include green laser with a wavelength of 532.0 nm, laser power supply, 500 mm focus lens, ocean optics USB 2000 spectrometer, fiber optic cable, USB cable, laptop software installed ocean view and origin pro. The thin film material which was characterized is GaAs. Characterization was carried out at temperatures of 300 K and 77 K with power variation in range 40 mW - 150 mW. The results showed that laser power variation does not affect the emitted wavelength. Otherwise, temperature affect the wavelength. The emitted wavelength is 840 nm at 300 K and 790 nm at 77 K. The value of gap energy at 300 K is 1.422 eV while at temperature 77 K is 1.519 eV. The photon energy at temperatur of 300 K and 77 K were 1.465 eV and 1.422 eV, respectively. Full Width at Half Maximum (FWHM) was used to determine the type of transition, which two peaks in the spectrum are around 1,499 eV and 1,467 eV at 300 K, while at 77 K is 1,564 eV and 1,559 eV, determined respectively as a band-to-band transition and Free Exciton (FE). The following results are in good agreement with existing theories so that this characterization tools development has been successful.

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